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IPW60R037P7XKSA1 Datasheet

IPW60R037P7XKSA1 Cover
DatasheetIPW60R037P7XKSA1
File Size1,382.5 KB
Total Pages14
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPW60R037P7XKSA1
Description MOSFET N-CH 650V 76A TO247-3

IPW60R037P7XKSA1 - Infineon Technologies

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URL Link

IPW60R037P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

37mOhm @ 29.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1.48mA

Gate Charge (Qg) (Max) @ Vgs

121nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5243pF @ 400V

FET Feature

-

Power Dissipation (Max)

255W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3