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IPP80R1K2P7XKSA1 Datasheet

IPP80R1K2P7XKSA1 Cover
DatasheetIPP80R1K2P7XKSA1
File Size968.09 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPP80R1K2P7XKSA1
Description MOSFET N-CH 800V 4.5A TO220-3

IPP80R1K2P7XKSA1 - Infineon Technologies

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URL Link

IPP80R1K2P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 1.7A, 10V

Vgs(th) (Max) @ Id

3.5V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 500V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3