Top

IPP80N04S306AKSA1 Datasheet

IPP80N04S306AKSA1 Cover
DatasheetIPP80N04S306AKSA1
File Size188.11 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IPP80N04S306AKSA1, IPI80N04S306AKSA1, IPB80N04S306ATMA1
Description MOSFET N-CH 40V 80A TO220-3, MOSFET N-CH 40V 80A TO262-3, MOSFET N-CH 40V 80A TO263-3

IPP80N04S306AKSA1 - Infineon Technologies

IPP80N04S306AKSA1 Datasheet Page 1
IPP80N04S306AKSA1 Datasheet Page 2
IPP80N04S306AKSA1 Datasheet Page 3
IPP80N04S306AKSA1 Datasheet Page 4
IPP80N04S306AKSA1 Datasheet Page 5
IPP80N04S306AKSA1 Datasheet Page 6
IPP80N04S306AKSA1 Datasheet Page 7
IPP80N04S306AKSA1 Datasheet Page 8
IPP80N04S306AKSA1 Datasheet Page 9

The Products You May Be Interested In

IPP80N04S306AKSA1 IPP80N04S306AKSA1 Infineon Technologies MOSFET N-CH 40V 80A TO220-3 539

More on Order

IPI80N04S306AKSA1 IPI80N04S306AKSA1 Infineon Technologies MOSFET N-CH 40V 80A TO262-3 194

More on Order

IPB80N04S306ATMA1 IPB80N04S306ATMA1 Infineon Technologies MOSFET N-CH 40V 80A TO263-3 465

More on Order

URL Link

IPP80N04S306AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 52µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3250pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI80N04S306AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 52µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3250pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPB80N04S306ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 52µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3250pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB