Top

IPP070N08N3 G Datasheet

IPP070N08N3 G Cover
DatasheetIPP070N08N3 G
File Size1,021.99 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IPP070N08N3 G, IPI070N08N3 G, IPB067N08N3GATMA1
Description MOSFET N-CH 80V 80A TO220-3, MOSFET N-CH 80V 80A TO262-3, MOSFET N-CH 80V 80A TO263-3

IPP070N08N3 G - Infineon Technologies

IPP070N08N3 G Datasheet Page 1
IPP070N08N3 G Datasheet Page 2
IPP070N08N3 G Datasheet Page 3
IPP070N08N3 G Datasheet Page 4
IPP070N08N3 G Datasheet Page 5
IPP070N08N3 G Datasheet Page 6
IPP070N08N3 G Datasheet Page 7
IPP070N08N3 G Datasheet Page 8
IPP070N08N3 G Datasheet Page 9
IPP070N08N3 G Datasheet Page 10
IPP070N08N3 G Datasheet Page 11

The Products You May Be Interested In

IPP070N08N3 G IPP070N08N3 G Infineon Technologies MOSFET N-CH 80V 80A TO220-3 430

More on Order

IPI070N08N3 G IPI070N08N3 G Infineon Technologies MOSFET N-CH 80V 80A TO262-3 316

More on Order

IPB067N08N3GATMA1 IPB067N08N3GATMA1 Infineon Technologies MOSFET N-CH 80V 80A TO263-3 5995

More on Order

URL Link

IPP070N08N3 G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3840pF @ 40V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

IPI070N08N3 G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3840pF @ 40V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPB067N08N3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3840pF @ 40V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB