Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPP06CN10LGXKSA1 |
| File Size | 545.23 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPP06CN10LGXKSA1 |
| Description | MOSFET N-CH 100V 100A TO220-3 |
IPP06CN10LGXKSA1 - Infineon Technologies
The Products You May Be Interested In
 |
IPP06CN10LGXKSA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | 510 More on Order |
URL Link
www.zouser.com/datasheet/IPP06CN10LGXKSA1
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.4V @ 180µA Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11900pF @ 50V FET Feature - Power Dissipation (Max) 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |