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IPP04N03LA Datasheet

IPP04N03LA Cover
DatasheetIPP04N03LA
File Size303.22 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IPP04N03LA, IPI04N03LA
Description MOSFET N-CH 25V 80A TO-220AB, MOSFET N-CH 25V 80A TO-262

IPP04N03LA - Infineon Technologies

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URL Link

IPP04N03LA

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3877pF @ 15V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

IPI04N03LA

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3877pF @ 15V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA