Top

IPL60R365P7AUMA1 Datasheet

IPL60R365P7AUMA1 Cover
DatasheetIPL60R365P7AUMA1
File Size1,327.62 KB
Total Pages14
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPL60R365P7AUMA1
Description MOSFET N-CH 650V 10A VSON-4

IPL60R365P7AUMA1 - Infineon Technologies

IPL60R365P7AUMA1 Datasheet Page 1
IPL60R365P7AUMA1 Datasheet Page 2
IPL60R365P7AUMA1 Datasheet Page 3
IPL60R365P7AUMA1 Datasheet Page 4
IPL60R365P7AUMA1 Datasheet Page 5
IPL60R365P7AUMA1 Datasheet Page 6
IPL60R365P7AUMA1 Datasheet Page 7
IPL60R365P7AUMA1 Datasheet Page 8
IPL60R365P7AUMA1 Datasheet Page 9
IPL60R365P7AUMA1 Datasheet Page 10
IPL60R365P7AUMA1 Datasheet Page 11
IPL60R365P7AUMA1 Datasheet Page 12
IPL60R365P7AUMA1 Datasheet Page 13
IPL60R365P7AUMA1 Datasheet Page 14

The Products You May Be Interested In

IPL60R365P7AUMA1 IPL60R365P7AUMA1 Infineon Technologies MOSFET N-CH 650V 10A VSON-4 8896

More on Order

URL Link

IPL60R365P7AUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

365mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

555pF @ 400V

FET Feature

-

Power Dissipation (Max)

46W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-VSON-4

Package / Case

4-PowerTSFN