Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPI26CN10N G |
| File Size | 1,047.74 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IPI26CN10N G, IPB26CN10NGATMA1 |
| Description | MOSFET N-CH 100V 35A TO262-3, MOSFET N-CH 100V 35A TO263-3 |
IPI26CN10N G - Infineon Technologies
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V Vgs(th) (Max) @ Id 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 50V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V Vgs(th) (Max) @ Id 4V @ 39µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 50V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |