Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPI070N06N G |
| File Size | 894.83 KB |
| Total Pages | 11 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPI070N06N G |
| Description | MOSFET N-CH 60V 80A TO220-3 |
IPI070N06N G - Infineon Technologies
The Products You May Be Interested In
 |
IPI070N06N G | Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 | 456 More on Order |
URL Link
www.zouser.com/datasheet/IPI070N06N G
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 30V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |