Top

IPD80R600P7ATMA1 Datasheet

IPD80R600P7ATMA1 Cover
DatasheetIPD80R600P7ATMA1
File Size957.29 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPD80R600P7ATMA1
Description MOSFET N-CH 800V 8A TO252-3

IPD80R600P7ATMA1 - Infineon Technologies

IPD80R600P7ATMA1 Datasheet Page 1
IPD80R600P7ATMA1 Datasheet Page 2
IPD80R600P7ATMA1 Datasheet Page 3
IPD80R600P7ATMA1 Datasheet Page 4
IPD80R600P7ATMA1 Datasheet Page 5
IPD80R600P7ATMA1 Datasheet Page 6
IPD80R600P7ATMA1 Datasheet Page 7
IPD80R600P7ATMA1 Datasheet Page 8
IPD80R600P7ATMA1 Datasheet Page 9
IPD80R600P7ATMA1 Datasheet Page 10
IPD80R600P7ATMA1 Datasheet Page 11
IPD80R600P7ATMA1 Datasheet Page 12
IPD80R600P7ATMA1 Datasheet Page 13

The Products You May Be Interested In

IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies MOSFET N-CH 800V 8A TO252-3 463

More on Order

URL Link

IPD80R600P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 170µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 500V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63