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IPD80R1K2P7ATMA1 Datasheet

IPD80R1K2P7ATMA1 Cover
DatasheetIPD80R1K2P7ATMA1
File Size972.76 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPD80R1K2P7ATMA1
Description MOSFET N-CH 800V 4.5A TO252-3

IPD80R1K2P7ATMA1 - Infineon Technologies

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URL Link

IPD80R1K2P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 1.7A, 10V

Vgs(th) (Max) @ Id

3.5V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 500V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63