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IPD160N04LGBTMA1 Datasheet

IPD160N04LGBTMA1 Cover
DatasheetIPD160N04LGBTMA1
File Size428.31 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPD160N04LGBTMA1
Description MOSFET N-CH 40V 30A TO252-3

IPD160N04LGBTMA1 - Infineon Technologies

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URL Link

IPD160N04LGBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 20V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63