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IPD06P005LATMA1 Datasheet

IPD06P005LATMA1 Cover
DatasheetIPD06P005LATMA1
File Size1,008.2 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPD06P005LATMA1
Description TRENCH 40<-<100V

IPD06P005LATMA1 - Infineon Technologies

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URL Link

IPD06P005LATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

250mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

13.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 30V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63