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IPB075N04LGATMA1 Datasheet

IPB075N04LGATMA1 Cover
DatasheetIPB075N04LGATMA1
File Size445.62 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPB075N04LGATMA1
Description MOSFET N-CH 40V 50A TO263-3

IPB075N04LGATMA1 - Infineon Technologies

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URL Link

IPB075N04LGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB