Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPB039N04LGATMA1 |
| File Size | 686.32 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPB039N04LGATMA1 |
| Description | MOSFET N-CH 40V 80A TO263-3 |
IPB039N04LGATMA1 - Infineon Technologies
The Products You May Be Interested In
 |
IPB039N04LGATMA1 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 | 558 More on Order |
URL Link
www.zouser.com/datasheet/IPB039N04LGATMA1
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V FET Feature - Power Dissipation (Max) 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |