Top

IPA80R360P7XKSA1 Datasheet

IPA80R360P7XKSA1 Cover
DatasheetIPA80R360P7XKSA1
File Size944.43 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPA80R360P7XKSA1
Description MOSFET N-CHANNEL 800V 13A TO220

IPA80R360P7XKSA1 - Infineon Technologies

IPA80R360P7XKSA1 Datasheet Page 1
IPA80R360P7XKSA1 Datasheet Page 2
IPA80R360P7XKSA1 Datasheet Page 3
IPA80R360P7XKSA1 Datasheet Page 4
IPA80R360P7XKSA1 Datasheet Page 5
IPA80R360P7XKSA1 Datasheet Page 6
IPA80R360P7XKSA1 Datasheet Page 7
IPA80R360P7XKSA1 Datasheet Page 8
IPA80R360P7XKSA1 Datasheet Page 9
IPA80R360P7XKSA1 Datasheet Page 10
IPA80R360P7XKSA1 Datasheet Page 11
IPA80R360P7XKSA1 Datasheet Page 12
IPA80R360P7XKSA1 Datasheet Page 13

The Products You May Be Interested In

IPA80R360P7XKSA1 IPA80R360P7XKSA1 Infineon Technologies MOSFET N-CHANNEL 800V 13A TO220 362

More on Order

URL Link

IPA80R360P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 280µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

930pF @ 500V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack