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| Datasheet | IPA60R520E6XKSA1 |
| File Size | 1,048.77 KB |
| Total Pages | 16 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPA60R520E6XKSA1 |
| Description | MOSFET N-CH 600V 8.1A TO220 |
IPA60R520E6XKSA1 - Infineon Technologies
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Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 520mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id 3.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 512pF @ 100V FET Feature - Power Dissipation (Max) 29W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Package / Case TO-220-3 Full Pack |