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IDC04S60CEX7SA1 Datasheet

IDC04S60CEX7SA1 Cover
DatasheetIDC04S60CEX7SA1
File Size57.48 KB
Total Pages5
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IDC04S60CEX7SA1, IDC04S60CEX1SA1
Description DIODE GEN PURPOSE SAWN WAFER, DIODE SIC 600V 4A SAWN WAFER

IDC04S60CEX7SA1 - Infineon Technologies

IDC04S60CEX7SA1 Datasheet Page 1
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IDC04S60CEX7SA1 Datasheet Page 5

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URL Link

IDC04S60CEX7SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

Diode Type

-

Voltage - DC Reverse (Vr) (Max)

-

Current - Average Rectified (Io)

-

Voltage - Forward (Vf) (Max) @ If

-

Speed

-

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

-

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Sawn on foil

Operating Temperature - Junction

-

IDC04S60CEX1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolSiC™+

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

4A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

50µA @ 600V

Capacitance @ Vr, F

130pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

Operating Temperature - Junction

-55°C ~ 175°C