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IDB12E120ATMA1 Datasheet

IDB12E120ATMA1 Cover
DatasheetIDB12E120ATMA1
File Size1,206.88 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IDB12E120ATMA1
Description DIODE GEN PURP 1.2KV 28A TO263-3

IDB12E120ATMA1 - Infineon Technologies

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URL Link

IDB12E120ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

28A (DC)

Voltage - Forward (Vf) (Max) @ If

2.15V @ 12A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

150ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

PG-TO263-3-2

Operating Temperature - Junction

-55°C ~ 150°C