Top

HUFA76443S3ST Datasheet

HUFA76443S3ST Cover
DatasheetHUFA76443S3ST
File Size210.57 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts HUFA76443S3ST, HUFA76443S3S, HUFA76443P3
Description MOSFET N-CH 60V 75A D2PAK, MOSFET N-CH 60V 75A D2PAK, MOSFET N-CH 60V 75A TO-220AB

HUFA76443S3ST - ON Semiconductor

HUFA76443S3ST Datasheet Page 1
HUFA76443S3ST Datasheet Page 2
HUFA76443S3ST Datasheet Page 3
HUFA76443S3ST Datasheet Page 4
HUFA76443S3ST Datasheet Page 5
HUFA76443S3ST Datasheet Page 6
HUFA76443S3ST Datasheet Page 7
HUFA76443S3ST Datasheet Page 8
HUFA76443S3ST Datasheet Page 9
HUFA76443S3ST Datasheet Page 10

The Products You May Be Interested In

HUFA76443S3ST HUFA76443S3ST ON Semiconductor MOSFET N-CH 60V 75A D2PAK 652

More on Order

HUFA76443S3S HUFA76443S3S ON Semiconductor MOSFET N-CH 60V 75A D2PAK 236

More on Order

HUFA76443P3 HUFA76443P3 ON Semiconductor MOSFET N-CH 60V 75A TO-220AB 203

More on Order

URL Link

HUFA76443S3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

129nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

4115pF @ 25V

FET Feature

-

Power Dissipation (Max)

260W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUFA76443S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

129nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

4115pF @ 25V

FET Feature

-

Power Dissipation (Max)

260W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUFA76443P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

129nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

4115pF @ 25V

FET Feature

-

Power Dissipation (Max)

260W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3