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HUF75337S3S Datasheet

HUF75337S3S Cover
DatasheetHUF75337S3S
File Size226.74 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts HUF75337S3S, HUF75337P3
Description MOSFET N-CH 55V 75A D2PAK, MOSFET N-CH 55V 75A TO-220AB

HUF75337S3S - ON Semiconductor

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URL Link

HUF75337S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

109nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1775pF @ 25V

FET Feature

-

Power Dissipation (Max)

175W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUF75337P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

109nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1775pF @ 25V

FET Feature

-

Power Dissipation (Max)

175W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3