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HS8K11TB Datasheet

HS8K11TB Cover
DatasheetHS8K11TB
File Size3,970.14 KB
Total Pages19
ManufacturerRohm Semiconductor
Websitehttps://www.rohm.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts HS8K11TB
Description MOSFET 2N-CH 30V 7A/11A HSML

HS8K11TB - Rohm Semiconductor

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HS8K11TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7A, 11A

Rds On (Max) @ Id, Vgs

17.9mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 15V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-UDFN Exposed Pad

Supplier Device Package

HSML3030L10