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HAT2287WP-EL-E Datasheet

HAT2287WP-EL-E Cover
DatasheetHAT2287WP-EL-E
File Size70.22 KB
Total Pages6
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts HAT2287WP-EL-E
Description MOSFET N-CH WPAK

HAT2287WP-EL-E - Renesas Electronics America

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URL Link

HAT2287WP-EL-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

17A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

94mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WPAK

Package / Case

8-PowerWDFN