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GP2M011A090NG Datasheet

GP2M011A090NG Cover
DatasheetGP2M011A090NG
File Size591.23 KB
Total Pages5
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GP2M011A090NG
Description MOSFET N-CH 900V 11A TO3PN

GP2M011A090NG - Global Power Technologies Group

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URL Link

GP2M011A090NG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3240pF @ 25V

FET Feature

-

Power Dissipation (Max)

416W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3