Top

GP2M007A080F Datasheet

GP2M007A080F Cover
DatasheetGP2M007A080F
File Size242.94 KB
Total Pages5
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GP2M007A080F
Description MOSFET N-CH 800V 7A TO220F

GP2M007A080F - Global Power Technologies Group

GP2M007A080F Datasheet Page 1
GP2M007A080F Datasheet Page 2
GP2M007A080F Datasheet Page 3
GP2M007A080F Datasheet Page 4
GP2M007A080F Datasheet Page 5

The Products You May Be Interested In

GP2M007A080F GP2M007A080F Global Power Technologies Group MOSFET N-CH 800V 7A TO220F 499

More on Order

URL Link

GP2M007A080F

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.9Ohm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1410pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack