Top

GP1M016A060N Datasheet

GP1M016A060N Cover
DatasheetGP1M016A060N
File Size580.15 KB
Total Pages5
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GP1M016A060N
Description MOSFET N-CH 600V 16A TO3PN

GP1M016A060N - Global Power Technologies Group

GP1M016A060N Datasheet Page 1
GP1M016A060N Datasheet Page 2
GP1M016A060N Datasheet Page 3
GP1M016A060N Datasheet Page 4
GP1M016A060N Datasheet Page 5

The Products You May Be Interested In

GP1M016A060N GP1M016A060N Global Power Technologies Group MOSFET N-CH 600V 16A TO3PN 506

More on Order

URL Link

GP1M016A060N

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

470mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3039pF @ 25V

FET Feature

-

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3