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GP1M016A025CG Datasheet

GP1M016A025CG Cover
DatasheetGP1M016A025CG
File Size539.03 KB
Total Pages6
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts GP1M016A025CG, GP1M016A025PG
Description MOSFET N-CH 250V 16A DPAK, MOSFET N-CH 250V 16A IPAK

GP1M016A025CG - Global Power Technologies Group

GP1M016A025CG Datasheet Page 1
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URL Link

GP1M016A025CG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

944pF @ 25V

FET Feature

-

Power Dissipation (Max)

93.9W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

GP1M016A025PG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

944pF @ 25V

FET Feature

-

Power Dissipation (Max)

93.9W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA