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GP1M003A080CH Datasheet

GP1M003A080CH Cover
DatasheetGP1M003A080CH
File Size510.25 KB
Total Pages6
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts GP1M003A080CH, GP1M003A080PH
Description MOSFET N-CH 800V 3A DPAK, MOSFET N-CH 800V 3A IPAK

GP1M003A080CH - Global Power Technologies Group

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URL Link

GP1M003A080CH

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

696pF @ 25V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

GP1M003A080PH

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

696pF @ 25V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA