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GC10MPS12-220 Datasheet

GC10MPS12-220 Cover
DatasheetGC10MPS12-220
File Size638.25 KB
Total Pages7
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GC10MPS12-220
Description SIC DIODE 1200V 10A TO-220-2

GC10MPS12-220 - GeneSiC Semiconductor

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GC10MPS12-220 GC10MPS12-220 GeneSiC Semiconductor SIC DIODE 1200V 10A TO-220-2 999

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URL Link

GC10MPS12-220

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

54A (DC)

Voltage - Forward (Vf) (Max) @ If

1.8V @ 10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

10µA @ 1200V

Capacitance @ Vr, F

660pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220-2

Operating Temperature - Junction

-55°C ~ 175°C