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| Datasheet | GB2X100MPS12-227 |
| File Size | 809.7 KB |
| Total Pages | 7 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GB2X100MPS12-227 |
| Description | SIC DIODE 1200V 200A SOT-227 |
GB2X100MPS12-227 - GeneSiC Semiconductor
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GB2X100MPS12-227 | GeneSiC Semiconductor | SIC DIODE 1200V 200A SOT-227 | 485 More on Order |
URL Link
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 2 Independent Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) 185A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 100A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 80µA @ 1200V Operating Temperature - Junction -55°C ~ 175°C Mounting Type Chassis Mount Package / Case SOT-227-4, miniBLOC Supplier Device Package SOT-227 |