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GB02SLT12-252 Datasheet

GB02SLT12-252 Cover
DatasheetGB02SLT12-252
File Size632.26 KB
Total Pages7
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GB02SLT12-252
Description DIODE SIC SCHKY 1.2KV 2A TO252

GB02SLT12-252 - GeneSiC Semiconductor

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GB02SLT12-252 GB02SLT12-252 GeneSiC Semiconductor DIODE SIC SCHKY 1.2KV 2A TO252 4353

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GB02SLT12-252

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

5A (DC)

Voltage - Forward (Vf) (Max) @ If

1.8V @ 2A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

50µA @ 1200V

Capacitance @ Vr, F

131pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252

Operating Temperature - Junction

-55°C ~ 175°C