Top

FQPF13N50C_F105 Datasheet

FQPF13N50C_F105 Cover
DatasheetFQPF13N50C_F105
File Size1,228.04 KB
Total Pages12
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FQPF13N50C_F105, FQP13N50C_F105
Description IC POWER MANAGEMENT, IC POWER MANAGEMENT

FQPF13N50C_F105 - ON Semiconductor

FQPF13N50C_F105 Datasheet Page 1
FQPF13N50C_F105 Datasheet Page 2
FQPF13N50C_F105 Datasheet Page 3
FQPF13N50C_F105 Datasheet Page 4
FQPF13N50C_F105 Datasheet Page 5
FQPF13N50C_F105 Datasheet Page 6
FQPF13N50C_F105 Datasheet Page 7
FQPF13N50C_F105 Datasheet Page 8
FQPF13N50C_F105 Datasheet Page 9
FQPF13N50C_F105 Datasheet Page 10
FQPF13N50C_F105 Datasheet Page 11
FQPF13N50C_F105 Datasheet Page 12

The Products You May Be Interested In

FQPF13N50C_F105 FQPF13N50C_F105 ON Semiconductor IC POWER MANAGEMENT 414

More on Order

FQP13N50C_F105 FQP13N50C_F105 ON Semiconductor IC POWER MANAGEMENT 597

More on Order

URL Link

FQPF13N50C_F105

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2055pF @ 25V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

FQP13N50C_F105

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2055pF @ 25V

FET Feature

-

Power Dissipation (Max)

195W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3