Top

FQPF10N60CT Datasheet

FQPF10N60CT Cover
DatasheetFQPF10N60CT
File Size1,470.56 KB
Total Pages12
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts FQPF10N60CT, FQPF10N60CYDTU, FQP10N60C, FQPF10N60C
Description MOSFET N-CH 600V 9.5A TO-220F, MOSFET N-CH 600V 9.5A TO-220F, MOSFET N-CH 600V 9.5A TO-220, MOSFET N-CH 600V 9.5A TO-220F

FQPF10N60CT - ON Semiconductor

FQPF10N60CT Datasheet Page 1
FQPF10N60CT Datasheet Page 2
FQPF10N60CT Datasheet Page 3
FQPF10N60CT Datasheet Page 4
FQPF10N60CT Datasheet Page 5
FQPF10N60CT Datasheet Page 6
FQPF10N60CT Datasheet Page 7
FQPF10N60CT Datasheet Page 8
FQPF10N60CT Datasheet Page 9
FQPF10N60CT Datasheet Page 10
FQPF10N60CT Datasheet Page 11
FQPF10N60CT Datasheet Page 12

The Products You May Be Interested In

FQPF10N60CT FQPF10N60CT ON Semiconductor MOSFET N-CH 600V 9.5A TO-220F 363

More on Order

FQPF10N60CYDTU FQPF10N60CYDTU ON Semiconductor MOSFET N-CH 600V 9.5A TO-220F 335

More on Order

FQP10N60C FQP10N60C ON Semiconductor MOSFET N-CH 600V 9.5A TO-220 463

More on Order

FQPF10N60C FQPF10N60C ON Semiconductor MOSFET N-CH 600V 9.5A TO-220F 1975

More on Order

URL Link

FQPF10N60CT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

730mOhm @ 4.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

FQPF10N60CYDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

730mOhm @ 4.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

FQP10N60C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

730mOhm @ 4.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 25V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

FQPF10N60C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

730mOhm @ 4.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack