Top

FQD10N20TM Datasheet

FQD10N20TM Cover
DatasheetFQD10N20TM
File Size778.05 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts FQD10N20TM, FQD10N20TF, FQU10N20TU
Description MOSFET N-CH 200V 7.6A DPAK, MOSFET N-CH 200V 7.6A DPAK, MOSFET N-CH 200V 7.6A IPAK

FQD10N20TM - ON Semiconductor

FQD10N20TM Datasheet Page 1
FQD10N20TM Datasheet Page 2
FQD10N20TM Datasheet Page 3
FQD10N20TM Datasheet Page 4
FQD10N20TM Datasheet Page 5
FQD10N20TM Datasheet Page 6
FQD10N20TM Datasheet Page 7
FQD10N20TM Datasheet Page 8
FQD10N20TM Datasheet Page 9

The Products You May Be Interested In

FQD10N20TM FQD10N20TM ON Semiconductor MOSFET N-CH 200V 7.6A DPAK 481

More on Order

FQD10N20TF FQD10N20TF ON Semiconductor MOSFET N-CH 200V 7.6A DPAK 563

More on Order

FQU10N20TU FQU10N20TU ON Semiconductor MOSFET N-CH 200V 7.6A IPAK 310

More on Order

URL Link

FQD10N20TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 51W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQD10N20TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 51W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQU10N20TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

7.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 51W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA