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FQB4N20LTM Datasheet

FQB4N20LTM Cover
DatasheetFQB4N20LTM
File Size519.06 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FQB4N20LTM, FQI4N20LTU
Description MOSFET N-CH 200V 3.8A D2PAK, MOSFET N-CH 200V 3.8A I2PAK

FQB4N20LTM - ON Semiconductor

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URL Link

FQB4N20LTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

1.35Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQI4N20LTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

1.35Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA