![FQB4N20LTM Cover](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0001.jpg)
Datasheet | FQB4N20LTM |
File Size | 519.06 KB |
Total Pages | 9 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | FQB4N20LTM, FQI4N20LTU |
Description | MOSFET N-CH 200V 3.8A D2PAK, MOSFET N-CH 200V 3.8A I2PAK |
FQB4N20LTM - ON Semiconductor
![FQB4N20LTM Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0001.jpg)
![FQB4N20LTM Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0002.jpg)
![FQB4N20LTM Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0003.jpg)
![FQB4N20LTM Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0004.jpg)
![FQB4N20LTM Datasheet Page 5](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0005.jpg)
![FQB4N20LTM Datasheet Page 6](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0006.jpg)
![FQB4N20LTM Datasheet Page 7](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0007.jpg)
![FQB4N20LTM Datasheet Page 8](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0008.jpg)
![FQB4N20LTM Datasheet Page 9](http://media.zouser.com/zouser/datasheet/sm/fqb4n20ltm-0009.jpg)
The Products You May Be Interested In
![]() |
FQB4N20LTM | ON Semiconductor | MOSFET N-CH 200V 3.8A D2PAK | 222 More on Order |
![]() |
FQI4N20LTU | ON Semiconductor | MOSFET N-CH 200V 3.8A I2PAK | 508 More on Order |
URL Link
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.35Ohm @ 1.9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.35Ohm @ 1.9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 45W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |