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FQB1N60TM Datasheet

FQB1N60TM Cover
DatasheetFQB1N60TM
File Size545.73 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQB1N60TM
Description MOSFET N-CH 600V 1.2A D2PAK

FQB1N60TM - ON Semiconductor

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FQB1N60TM FQB1N60TM ON Semiconductor MOSFET N-CH 600V 1.2A D2PAK 535

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URL Link

FQB1N60TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11.5Ohm @ 600mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB