Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FQB19N10LTM |
| File Size | 611.25 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQB19N10LTM |
| Description | MOSFET N-CH 100V 19A D2PAK |
FQB19N10LTM - ON Semiconductor
The Products You May Be Interested In
 |
FQB19N10LTM | ON Semiconductor | MOSFET N-CH 100V 19A D2PAK | 601 More on Order |
URL Link
www.zouser.com/datasheet/FQB19N10LTM
|
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 100mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V FET Feature - Power Dissipation (Max) 3.75W (Ta), 75W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |