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FPN660A_D27Z Datasheet

FPN660A_D27Z Cover
DatasheetFPN660A_D27Z
File Size57.71 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 5 part numbers
Associated Parts FPN660A_D27Z, FPN660, FPN660A_D75Z, FPN660A, FPN660A_D26Z
Description TRANS PNP 60V 3A TO-226, TRANS PNP 60V 3A TO-226, TRANS PNP 60V 3A TO-226, TRANS PNP 60V 3A TO-226, TRANS PNP 60V 3A TO-226

FPN660A_D27Z - ON Semiconductor

FPN660A_D27Z Datasheet Page 1
FPN660A_D27Z Datasheet Page 2
FPN660A_D27Z Datasheet Page 3
FPN660A_D27Z Datasheet Page 4
FPN660A_D27Z Datasheet Page 5

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URL Link

FPN660A_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

250 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

75MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-226

FPN660

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

450mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

75MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-226

FPN660A_D75Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

250 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

75MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-226

FPN660A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

250 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

75MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-226

FPN660A_D26Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

250 @ 500mA, 2V

Power - Max

1W

Frequency - Transition

75MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-226