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FJY3011R Datasheet

FJY3011R Cover
DatasheetFJY3011R
File Size244.24 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FJY3011R
Description TRANS PREBIAS NPN 200MW SOT523F

FJY3011R - ON Semiconductor

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URL Link

FJY3011R

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Supplier Device Package

SOT-523F