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FGB40N6S2 Datasheet

FGB40N6S2 Cover
DatasheetFGB40N6S2
File Size176.34 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts FGB40N6S2, FGB40N6S2T, FGP40N6S2, FGH40N6S2
Description IGBT 600V 75A 290W TO263AB, IGBT 600V 75A 290W TO263AB, IGBT 600V 75A 290W TO220AB, IGBT 600V 75A 290W TO247

FGB40N6S2 - ON Semiconductor

FGB40N6S2 Datasheet Page 1
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FGP40N6S2 FGP40N6S2 ON Semiconductor IGBT 600V 75A 290W TO220AB 208

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FGH40N6S2 FGH40N6S2 ON Semiconductor IGBT 600V 75A 290W TO247 355

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URL Link

FGB40N6S2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Power - Max

290W

Switching Energy

115µJ (on), 195µJ (off)

Input Type

Standard

Gate Charge

35nC

Td (on/off) @ 25°C

8ns/35ns

Test Condition

390V, 20A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

FGB40N6S2T

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Power - Max

290W

Switching Energy

115µJ (on), 195µJ (off)

Input Type

Standard

Gate Charge

35nC

Td (on/off) @ 25°C

8ns/35ns

Test Condition

390V, 20A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

FGP40N6S2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Power - Max

290W

Switching Energy

115µJ (on), 195µJ (off)

Input Type

Standard

Gate Charge

35nC

Td (on/off) @ 25°C

8ns/35ns

Test Condition

390V, 20A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

FGH40N6S2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Power - Max

290W

Switching Energy

115µJ (on), 195µJ (off)

Input Type

Standard

Gate Charge

35nC

Td (on/off) @ 25°C

8ns/35ns

Test Condition

390V, 20A, 3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3