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FF23MR12W1M1B11BOMA1 Datasheet

FF23MR12W1M1B11BOMA1 Cover
DatasheetFF23MR12W1M1B11BOMA1
File Size476.62 KB
Total Pages7
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts FF23MR12W1M1B11BOMA1
Description MOSFET 2 N-CH 1200V 50A MODULE

FF23MR12W1M1B11BOMA1 - Infineon Technologies

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FF23MR12W1M1B11BOMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolSiC™+

FET Type

2 N-Channel (Dual)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

50A

Rds On (Max) @ Id, Vgs

23mOhm @ 50A, 15V

Vgs(th) (Max) @ Id

5.55V @ 20mA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds

3950pF @ 800V

Power - Max

20mW

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

Module