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FESE8JT-E3/45 Datasheet

FESE8JT-E3/45 Cover
DatasheetFESE8JT-E3/45
File Size86.21 KB
Total Pages5
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts FESE8JT-E3/45, FESE8HT-E3/45
Description DIODE GEN PURP 600V 8A TO220AC, DIODE GEN PURP 500V 8A TO220AC

FESE8JT-E3/45 - Vishay Semiconductor Diodes Division

FESE8JT-E3/45 Datasheet Page 1
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FESE8JT-E3/45 FESE8JT-E3/45 Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A TO220AC 222

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FESE8HT-E3/45 FESE8HT-E3/45 Vishay Semiconductor Diodes Division DIODE GEN PURP 500V 8A TO220AC 206

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FESE8JT-E3/45

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

50ns

Current - Reverse Leakage @ Vr

10µA @ 600V

Capacitance @ Vr, F

50pF @ 4V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-55°C ~ 150°C

FESE8HT-E3/45

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

500V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

50ns

Current - Reverse Leakage @ Vr

10µA @ 500V

Capacitance @ Vr, F

50pF @ 4V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-55°C ~ 150°C