Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FDU6612A |
| File Size | 122.8 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FDU6612A, FDD6612A |
| Description | MOSFET N-CH 30V 9.5A I-PAK, MOSFET N-CH 30V 9.5A DPAK |
FDU6612A - ON Semiconductor
The Products You May Be Interested In
URL Link
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 36W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 36W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |