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FDMS3669S Datasheet

FDMS3669S Cover
DatasheetFDMS3669S
File Size1,105.13 KB
Total Pages14
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDMS3669S
Description MOSFET 2N-CH 30V 13A/18A PWR56

FDMS3669S - ON Semiconductor

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URL Link

FDMS3669S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A, 18A

Rds On (Max) @ Id, Vgs

10mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1605pF @ 15V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

Power56