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FDMC510P-F106 Datasheet

FDMC510P-F106 Cover
DatasheetFDMC510P-F106
File Size310.87 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FDMC510P-F106, FDMC510P
Description ST3 20V/8V PCH ERTREN, MOSFET P-CH 20V 18A 8-MLP

FDMC510P-F106 - ON Semiconductor

FDMC510P-F106 Datasheet Page 1
FDMC510P-F106 Datasheet Page 2
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FDMC510P-F106 Datasheet Page 6

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URL Link

FDMC510P-F106

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

8mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

116nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

7860pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

FDMC510P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

8mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

116nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

7860pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MLP (3.3x3.3)

Package / Case

8-PowerWDFN