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FDG6321C-F169 Datasheet

FDG6321C-F169 Cover
DatasheetFDG6321C-F169
File Size241.1 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDG6321C-F169
Description INTEGRATED CIRCUIT

FDG6321C-F169 - ON Semiconductor

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URL Link

FDG6321C-F169

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta), 410mA (Ta)

Rds On (Max) @ Id, Vgs

450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.3nC @ 4.5V, 1.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V, 62pF @ 10V

Power - Max

300mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363