Top

FDFMA2P029Z-F106 Datasheet

FDFMA2P029Z-F106 Cover
DatasheetFDFMA2P029Z-F106
File Size489.01 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FDFMA2P029Z-F106, FDFMA2P029Z
Description -20V -3.1A 95 O PCH ER T, MOSFET P-CH 20V 3.1A 2X2MLP

FDFMA2P029Z-F106 - ON Semiconductor

FDFMA2P029Z-F106 Datasheet Page 1
FDFMA2P029Z-F106 Datasheet Page 2
FDFMA2P029Z-F106 Datasheet Page 3
FDFMA2P029Z-F106 Datasheet Page 4
FDFMA2P029Z-F106 Datasheet Page 5
FDFMA2P029Z-F106 Datasheet Page 6
FDFMA2P029Z-F106 Datasheet Page 7
FDFMA2P029Z-F106 Datasheet Page 8

The Products You May Be Interested In

FDFMA2P029Z-F106 FDFMA2P029Z-F106 ON Semiconductor -20V -3.1A 95 O PCH ER T 328

More on Order

FDFMA2P029Z FDFMA2P029Z ON Semiconductor MOSFET P-CH 20V 3.1A 2X2MLP 172

More on Order

URL Link

FDFMA2P029Z-F106

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

95mOhm @ 3.1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-MicroFET (2x2)

Package / Case

6-VDFN Exposed Pad

FDFMA2P029Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

95mOhm @ 3.1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.4W (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-MicroFET (2x2)

Package / Case

6-VDFN Exposed Pad