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FDD86113LZ Datasheet

FDD86113LZ Cover
DatasheetFDD86113LZ
File Size468.11 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDD86113LZ
Description MOSFET N-CH 100V 4.2A DPAK-3

FDD86113LZ - ON Semiconductor

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FDD86113LZ FDD86113LZ ON Semiconductor MOSFET N-CH 100V 4.2A DPAK-3 16022

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URL Link

FDD86113LZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta), 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

104mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

285pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 29W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63