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FDD3510H Datasheet

FDD3510H Cover
DatasheetFDD3510H
File Size486.76 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDD3510H
Description MOSFET N/P-CH 80V 4.3A/2.8A DPAK

FDD3510H - ON Semiconductor

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FDD3510H FDD3510H ON Semiconductor MOSFET N/P-CH 80V 4.3A/2.8A DPAK 344

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URL Link

FDD3510H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

4.3A, 2.8A

Rds On (Max) @ Id, Vgs

80mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 40V

Power - Max

1.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Supplier Device Package

TO-252-4L