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FDC3601N Datasheet

FDC3601N Cover
DatasheetFDC3601N
File Size304.1 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDC3601N
Description MOSFET 2N-CH 100V 1A SSOT-6

FDC3601N - ON Semiconductor

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FDC3601N FDC3601N ON Semiconductor MOSFET 2N-CH 100V 1A SSOT-6 569

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FDC3601N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A

Rds On (Max) @ Id, Vgs

500mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

153pF @ 50V

Power - Max

700mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

SuperSOT™-6